Power Semiconductors

نویسندگان

  • Brian K. Johnson
  • Herbert L. Hess
چکیده

The objective of this paper is present the data requirements for modeling power electronic devices to aid in modeling power converters for transient simulation studies. The presentation will target applications of power semiconductor devices commonly used in medium to high power applications: insulated gate bipolar transistors (IGBTs), Thyristors (SCR), and Gate TurnOff Thyristors (GTOs) and power diodes. The intended audience is power engineers modeling converters for transient simulations rather more than converter designers. Low power, single-phase loads are beyond the scope of the presentation.

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تاریخ انتشار 2001